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Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
Topics in Applied Physics 124
ISBN/EAN: 9789401784726
Umbreit-Nr.: 7552245
Sprache:
Englisch
Umfang: xvi, 355 S.
Format in cm:
Einband:
kartoniertes Buch
Erschienen am 02.11.2014
Auflage: 1/2014
- Zusatztext
- This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic applications. The text first introduces the reader to the historical background and the major theoretical challenges presented when 4f electron systems are embedded in a semiconductor matrix. It details the preparation of samples for experimental study, either by in-situ growth or ion implantation/annealing, and describes their microscopic structural characterisation. Optical spectroscopy is a dominant theme, complicated by site multiplicity, whether in homogeneous hosts or in heterostructures such as quantum dots, and enlivened by the abiding fascination of the energy transfer mechanism between the host material and the lumophore. Finally, the rapid progress towards prospective optoelectronic and spintronic devices is presented along with several examples.
- Kurztext
- Inhaltsangabe1.Introduction and overview. Kevin O'DONNELL, Strathclyde, UK. 2.Theoretical background. Robert JONES, Exeter and Benjamin HOURAHINE, Strathclyde, UK. 3.Insitu doping of MBE IIIN: RE epilayers. Andrew STECKL and John ZAVADA, Nanolab Cincinatti, USA. 4.RE implantation and annealing of III-Nitrides. Katharina LORENZ and Eduardo ALVEZ, ITN Lisbon, Portugal. 5.Lattice location studies of RE impurities in III-Nitrides. Andre VANTOMME, IKS Leuven, Belgium. 6.Microscopic characterisation of luminescent III-N:RE epilayers. Robert MARTIN, Strathclyde, UK 7.Highresolution optical studies of site multiplicity in IIIN:RE. Volkmar DIEROLF, Lehigh, USA. 8.REdoped IIIN quantum dots. Bruno DAUDIN, Grenoble, France. 9.Excitation model for RE ions in solids. Alain BRAUD and Pierre RUTERANA, Caen, France. 10.IIIN:RE electroluminescence. Andrew STECKL and John ZAVADA, Nanolab Cincinatti, USA. 11.REdoped IIIN for spintronics applications. Oliver BRANDT, PDI Berlin, Germany. 12.Summary and prospects for future work. Kevin O'DONNELL, Strathclyde, UK.