Detailansicht
High-Speed Photodiodes in Standard CMOS Technology
The Springer International Series in Engineering and Computer Science 869
ISBN/EAN: 9781441939449
Umbreit-Nr.: 960748
Sprache:
Englisch
Umfang: viii, 160 S.
Format in cm:
Einband:
kartoniertes Buch
Erschienen am 19.11.2010
Auflage: 1/2006
- Zusatztext
- Inhaltsangabe1 Introduction 1.1 Outline 2 Short range optical interconnection 2.1 Why optical interconnection? 2.1.1 Electrical and Optical Interconnection - Similarities 2.1.2 Electrical and Optical Interconnection - Differences 2.2 Characteristics of light 2.3 Optical fiber types 2.3.1 Singlemode fibers 2.3.2 Multimode fibers 2.3.3 Plastic optical fibers 2.4 High intensity light sources 2.4.1 Lasers 2.4.2 Light Emitting Diodes (LEDs) 2.5 Photodetectors - introduction 2.5.1 Ideal photodetector 2.5.2 Absorption of light in silicon 2.6 Highspeed optical receivers in CMOS for [small lambda] = 850 nmliterature overview 2.6.1 Using standard CMOS technology 2.6.2 CMOS technology modi.cation 3 CMOS photodiodes for [small lambda] = 850 nm 3.1 Introduction 3.2 Bandwidth of photodiodes in CMOS 3.2.1 Intrinsic (physical) bandwidth 3.2.2 Comparison between simulations and measurements 3.2.3 N+/psubstrate diode 3.2.4 P+/nwell/p-substrate photodiode with low resistance substrate in adjoinedwell technology 3.3 Intrinsic (physical) photodiode bandwidth 3.4 Extrinsic (electrical) photodiode bandwidth 3.5 Noise in photodiodes 3.6 Summary and conclusions 4 High datarates with CMOS photodiodes 4.1 Introduction 4.2 Transimpedance amplifier design 4.2.1 Transimpedance ampli.ers and extrinsic bandwidth 4.2.2 Impact of noise: BER 4.2.3 Noise of the TIA 4.3 Photodiode selection 4.4 Equalizer design 4.5 Robustness on spread and temperature 4.6 Experimental results 4.6.1 Circuit details and measurement setup 4.6.2 Optical receiver performance without equalizer 4.6.3 Optical receiver performance with equalizer 4.6.4 Robustness of the pre-amplifier: component spread 4.6.5 Robustness of the pre-amplifier: diode spread 4.7 Conclusions 5 Bulk CMOS photodiodes for [small lambda]= 400 nm 5.1 Introduction 5.2 Finger nwell/p-substrate diode in adjoined-well technology 5.3 Finger n+/nwell/p-substrate diode 5.3.1 Time domain measurements 5.4 Finger n+/p-substrate photodiode in separate-well technology 5.5 Finger p+/nwell/p-substrate in adjoined-well technology 5.5.1 Time domain measurements 5.6 p+/nwell photodiode 5.7 Conclusion 6 Polysilicon photodiode 6.1 Highspeed lateral polydiode 6.1.1 Pulse response of the poly photodiode 6.1.2 Di.usion current outside the depletion region 6.1.3 Frequency characterization of the polysilicon photodiode 6.2 Noise in polysilicon photodiodes 6.2.1 Dark leakage current in the polysilicon diode 6.3 Time domain measurements 6.4 Quantum efficiency and sensitivity 6.5 Conclusion 7 CMOS photodiodes: generalized 7.1 Introduction 7.2 Generalization of CMOS photodiodes 7.3 Device layer - photocurrent amplitude 7.3.1 Device layer - photocurrent bandwidth 7.3.2 Substrate current-photocurrent amplitude 7.3.3 Substrate current-photocurrent bandwidth 7.3.4 Depletion region current 7.3.5 Depletion region - photocurrent bandwidth 7.3.6 Total photocurrent 7.4 Analog equalization 7.5 Summary and Conclusions 8 Conclusions 8.1 Conclusions
- Kurztext
- Describes state of the art in integrated photodiodes in CMOS technologyDescribes the fastest photo detector methodologyGive a very good introduction in the subject of high speed photodiodes in CMOSIncludes supplementary material: sn.pub/extras