Detailansicht
High Mobility and Quantum Well Transistors
Design and TCAD Simulation, Springer Series in Advanced Microelectronics 42
ISBN/EAN: 9789400763395
Umbreit-Nr.: 4396374
Sprache:
Englisch
Umfang: xviii, 140 S.
Format in cm:
Einband:
gebundenes Buch
Erschienen am 09.04.2013
Auflage: 1/2013
- Zusatztext
- InhaltsangabeList of Abbreviations and Symbols. 1 Introduction. 1.1 Transistor Scaling. 1.2 What's Next? (2010 -.). 1.3 Goals of the Book. 1.4 Organization of the Book. 2 S/D Junctions in Ge: experimental. 2.1 Introduction. 2.2 P-type Junctions. 2.3 N-Type Junctions. 2.4 Benchmarking. 2.5 Summary and Conclusions. 3 TCAD Simulation and Modeling of Ion Implants in Germanium. 3.1 Introduction. 3.2 Ion Implant into Germanium - Monte Carlo Simulations. 3.3 Ion Implant into Germanium - Analytical Description. 3.4 Application to a 70 nm Bulk Ge pFET Technology. 3.5 Summary and Conclusions. 4 Electrical TCAD Simulations and Modeling in Germanium. 4.1 Introduction. 4.2 TCAD Models for a Germanium pMOSFET technology. 4.3 Electrical TCAD simulations - 65 nm Ge pMOSFET Technology. 4.4 Impact of Interface Traps MOS Performance. 4.5 Summary and Conclusions. 5 Investigation of Quantum Well Transistors for Scaled Technologies. 5.1 Introduction. 5.2 Motivation - Scalability Issues in Bulk MOSFET Technologies. 5.3 Towards A Scalable Transistor Architecture. 5.4 High Electron Mobility Transistors: an Alternative Approach. 5.5 Operation of Heterostructure Transistors: Analytical Description. 5.6 Conclusions. 6 Implant-Free Quantum Well FETs: Experimental investigation. 6.1 Introduction. 6.2 First-Generation SiGe Implant-Free Quantum Well pFET. 6.3 Enhancing Performance in SiGe IFQW pFETs. 6.4 Second-generation Strained SiGe IFQW pFETs. 6.5 Matching Performance and VT -Tuning in IFQW pFETs. 6.6 SiGe Quantum Well Diffusion Study. 6.7 Conclusions. 7 Conclusions Future Work and Outlook. 7.1 Conclusions. 7.2 Future Work and Outlook. Bibliography. List of Publications.
- Kurztext
- InhaltsangabeList of Abbreviations and Symbols. 1 Introduction. 1.1 Transistor Scaling. 1.2 What's Next? (2010 -.). 1.3 Goals of the Book. 1.4 Organization of the Book. 2 S/D Junctions in Ge: experimental. 2.1 Introduction. 2.2 P-type Junctions. 2.3 N-Type Junctions. 2.4 Benchmarking. 2.5 Summary and Conclusions. 3 TCAD Simulation and Modeling of Ion Implants in Germanium. 3.1 Introduction. 3.2 Ion Implant into Germanium - Monte Carlo Simulations. 3.3 Ion Implant into Germanium - Analytical Description. 3.4 Application to a 70 nm Bulk Ge pFET Technology. 3.5 Summary and Conclusions. 4 Electrical TCAD Simulations and Modeling in Germanium. 4.1 Introduction. 4.2 TCAD Models for a Germanium pMOSFET technology. 4.3 Electrical TCAD simulations - 65 nm Ge pMOSFET Technology. 4.4 Impact of Interface Traps MOS Performance. 4.5 Summary and Conclusions. 5 Investigation of Quantum Well Transistors for Scaled Technologies. 5.1 Introduction. 5.2 Motivation - Scalability Issues in Bulk MOSFET Technologies. 5.3 Towards A Scalable Transistor Architecture. 5.4 High Electron Mobility Transistors: an Alternative Approach. 5.5 Operation of Heterostructure Transistors: Analytical Description. 5.6 Conclusions. 6 ImplantFree Quantum Well FETs: Experimental investigation. 6.1 Introduction. 6.2 FirstGeneration SiGe ImplantFree Quantum Well pFET. 6.3 Enhancing Performance in SiGe IFQW pFETs. 6.4 Secondgeneration Strained SiGe IFQW pFETs. 6.5 Matching Performance and VT Tuning in IFQW pFETs. 6.6 SiGe Quantum Well Diffusion Study. 6.7 Conclusions. 7 Conclusions Future Work and Outlook. 7.1 Conclusions. 7.2 Future Work and Outlook. Bibliography. List of Publications.
- Autorenportrait
- Geert Hellings received the B.S. and M.S. degrees in Electrical Engineering from the KU Leuven, Belgium, in 2007. His master thesis was on III-nitride-based UV detectors for space applications. He obtained the PhD degree from the Electrical Engineering Department (ESAT), Integrated Systems Division (INSYS) at the University of Leuven, Belgium. During his PhD, he worked on the integration of high-mobility channel materials for digital logic applications at imec, Leuven, Belgium. He received a Ph.D. grant from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen), Brussels, Belgium. He won the 2008 IEEE Region 8 Student Paper Contest and received the 2011 imec Scientific Excellence Award. He has authored or co-authored approximately 70 technical papers for publication in journals and presentations at conferences and holds various patents. Kristin De Meyer M.Sc. (1974), PhD (1979) KULeuven. She was holder of an IBM World Trade Postdoctoral Fellowship at the IBM T. J. Watson Research Center, Yorktown Heights, NY. Currently she is the Director of Doctoral Research in imec. Since October 1986, she has also been a Part-Time Professor with ESAT-INSYS, KUL. She was the Coordinator for IMEC in several EEC projects. Dr. De Meyer is an IIEE fellow ,member of the Belgian Federal Council for Science Policy and (co) author of over 500 publications.