Detailansicht
Simulation of Semiconductor Processes and Devices 1998
SISPAD 98
ISBN/EAN: 9783709174159
Umbreit-Nr.: 5645278
Sprache:
Englisch
Umfang: xiv, 410 S.
Format in cm:
Einband:
kartoniertes Buch
Erschienen am 28.01.2012
Auflage: 1/1998
- Zusatztext
- InhaltsangabeTCAD in SRC.- TCAD in Selete.- Integration of Lithography and Etch Simulations.- Integrated Three-Dimensional Topography Simulation and Its Application to Dual-Damascene Processing.- Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation.- Development of a Gas-Phase Chemistry Model for Numerical Prediction of MOVPE of GaN in Industrial Scale Reactors.- Modeling of Flow and Heat Transfer in a Vertical Reactor for the MOCVD of Zirconium-Based Coatings.- Design Optimization of RF Power MOSFET's Using Large Signal Analysis Device Simulation of Matching Networks.- Modeling of Temperature Dependence of Floating Pad Structure's RF Properties.- A Comprehensive Model of a VLSI Spiral Inductor Derived from the First Principles.- Simulation of SiGe Epitaxial Growth for RF-Bipolar Transistors.- Extension of Spherical Harmonic Method to RF Transient Regime.- Multiscale Modeling of the Implantation and Annealing of Silicon Devices.- Dynamics of Arsenic Dose Loss at the SiO2 Interface during TED.- Damage Accumulation by Arsenic Ion Implantation and Its Impact on Transient Enhanced Diffusion of As and B.- A Simple Continuum Model for Simulation of Boron Interstitial Clusters Based on Atomistic Calculations.- Electromagnetic Simulation for the Modeling of Interconnects.- Layout-Based 3D Solid Modeling of IC Structures and Interconnects Including Electrical Parameter Extraction.- Exponential Expansion for Rapid and Accurate Extraction of Interconnect Capacitance.- Rigorous Capacitance Simulation of DRAM Cells.- A Hybrid Technique for TCAD Modeling and Optimization.- A Qualitative Study on Optimized MOSFET Doping Profiles.- Modeling Process and Transistor Variation for Circuit Performance Analysis.- Statistical Modeling Based on Extensive TCAD Simulations: Proposed Methodology for Extraction of Fast/Slow Models and Statistical Models.- Parallel and Distributed TCAD Simulations Using Dynamic Load Balance.- Device Simulator Calibration for Quartermicron CMOS Devices.- Automatic Mesh Refinement for 3D Numerical Simulation of Thermal Diffusion in Silicon.- A Common Mesh Implementation for Both Static and Moving Boundary Process Simulations.- A Dopant-Dependent Band Gap Narrowing Model: Application for Bipolar Device Simulation.- Improved Modelling of Bandgap-Narrowing Effects in Silicon p+/n+ Junctions.- Simulation of Electron Mobility in Ultrathin Fully Depleted Single Gate SOI MOSFETs.- Simplified Simulator for Neutron-Induced Soft Errors Based on Modified BGR Model.- Quantum Effects in the Simulation of Conventional Devices.- Efficient Quantum Correction Model for Multi-Dimensional CMOS Simulations.- The Role of Quantization Effects in Inversion Hole Layers of Tunnel MOS Structures on n-Si Substrates.- Multi-Dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques.- Microsystems CAD: from FEM to System Simulation.- Methods for Model Generation and Parameter Extraction for MEMS.- A Heterogeneous Environment for Computational Prototyping and Simulation Based Design of MEMS Devices.- Bias-Dependent Low-Frequency Noise Model for Low Phase Noise InP HEMT based MMIC Oscillator Design.- 3D Modeling of Sputter Process with Monte Carlo Method.- Effects of Scaling and Lattice Heating on n-MOSFET Performance via Electrothermal Monte Carlo Simulation.- Efficient Modeling of Spatially Varying Degeneracy in Monte Carlo Particle Simulation of Highly Doped Submicron HEMT.- Monte Carlo Modelling of Spin Relaxation in a III-V Two Dimensional Electron Channel.- Combining the Scattering Matrix and Spherical Harmonic Methods for Semiconductor Modeling.- Discretization of the Brillouin Zone by an Octree/Delaunay Method with Application to Full-Band Monte Carlo Transport Simulation.- A Hybrid Approach for Building 2D and 3D Conforming Delaunay Meshes Suitable for Process and Device Simulation.- Improving the Quality of Delaunay Triangulations for the Control Volume Discretization Method.- Three-
- Kurztext
- The latest results in simulation of semiconductor processes and devices are presentedThis conference is the most important forum for exchanging scientific information